Display device

ABSTRACT

A display device includes a substrate including a display area including a plurality of main pixels, and a sensor area including a plurality of auxiliary pixels and a plurality of transmission portions; and a plurality of wirings arranged along edges of the plurality of transmission portions and electrically connecting the plurality of auxiliary pixels to each other. The plurality of wrings includes a first directional wirings extending in a first direction and arranged in a second direction crossing the first direction, and a second directional wirings extending in the second direction and arranged in the first direction, and a wiring adjacent to the transmission portion from among the first directional wirings includes a first extension portion.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2019-0093556, filed on Jul. 31, 2019, in the KoreanIntellectual Property Office, the content of which is herebyincorporated by reference in its entirety.

BACKGROUND 1. Field

Exemplary implementations of the present disclosure relate generally toa display device.

2. Description of the Related Art

With the development of information society, requirements for displaydevices (for displaying images) have increased in various forms. Forexample, display devices are applied to various suitable electronicappliances such as smartphones, digital cameras, notebook computers,navigators, and/or smart televisions. The display device may be a flatpanel display such as a liquid crystal display device, a field emissiondisplay device, an organic light emitting display device, and/or quantumdot emitting display device.

Recently, various methods for reducing or minimizing the ratio of anon-display area to a display area of a display device have beenstudied. One of the various methods is a method of arranging varioussensors under a display panel rather than in a hole formed in thedisplay panel. The display device in which sensors are arranged underthe display panel may include sensor areas provided within a pixelregion (for realizing an image) and a transmission portion (forarranging sensors).

SUMMARY

An aspect of the present disclosure is directed toward a display device,in which wirings disposed around a transmission portion is formed tohave an octagonal shape or a circular shape, thereby improving the lightreceiving quantity and quality of a sensor device disposed under thetransmission portion.

Additional features of the present disclosure will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the inventive concepts.

According to an embodiment of the present disclosure, a display deviceincludes: a substrate including a display area including a plurality ofmain pixels, and a sensor area including a plurality of auxiliary pixelsand a plurality of transmission portions; and a plurality of wiringsarranged along edges of the plurality of transmission portions andelectrically connecting the plurality of auxiliary pixels to each other.The plurality of wrings includes a plurality of first directionalwirings extending in a first direction and arranged in a seconddirection crossing the first direction, and a plurality of seconddirectional wirings extending in the second direction and arranged inthe first direction, and a wiring adjacent to the transmission portionfrom among the plurality of first directional wirings includes a firstextension portion.

Each transmission portion of the plurality of transmission portions mayhave a polygonal shape, a circular shape, or an elliptical shape in aplan view.

Each transmission portion of the plurality of transmission portions mayhave an octagonal shape in a plan view.

The display device may further comprise a sensor device overlapping withthe plurality of transmission portions in a thickness direction of thesubstrate, the sensor device is to utilize infrared light, visiblelight, and/or sound.

The plurality of first directional wirings may include: a first wiringto apply an initialization voltage into auxiliary pixels arranged in thefirst direction from among the plurality of auxiliary pixels; a secondwiring to apply a first scan signal into the auxiliary pixels arrangedin the first direction; a third wiring to apply a second scan signalinto the auxiliary pixels arranged in the first direction; and a fourthwiring to apply an emission control signal into the auxiliary pixelsarranged in the first direction.

The plurality of second directional wirings may include: a fifth wiringto apply a data voltage into auxiliary pixels arranged in the seconddirection from among the plurality of auxiliary pixels; and a sixthwiring to apply a first power into the auxiliary pixels arranged in thesecond direction.

In an area in which the auxiliary pixels arranged in the first directionare arranged, the second wiring, the third wiring, and the fourth wiringmay be on the substrate, a first insulation layer may be on the secondwiring, the third wiring, and the fourth wiring, and the first wiringmay be on the first insulation layer.

In the edges of the plurality of transmission portions, the secondwiring and the fourth wiring may be on the substrate, and the firstwiring and a connection wiring of the third wiring may be on the firstinsulation layer.

The connection wiring of the third wiring may be connected to the thirdwiring through a first contact hole which penetrates the firstinsulating layer.

In the area in which the auxiliary pixels arranged in the firstdirection are arranged, a second insulation layer may be on the firstwiring, and the fifth wiring and the sixth wiring may be on a secondinsulation layer.

In the edges of the plurality of transmission portions, the fifth wiringmay be on the second insulation layer, a third insulation layer may beon the fifth wiring, and a connection wiring of the sixth wiring may beon the third insulation layer.

The connection wiring of the sixth wiring may be connected to the sixthwiring through a second contact hole which penetrates the thirdinsulating layer.

Each of the first to sixth wirings may include a bending portion whichis bent at the edges of the plurality of transmission portions in a planview, and the first extension portion may be extended from the bendingportion of the fourth wiring.

The first extension portion may have a triangle shape in a plan view.

The first extension portion may include a first hypotenuse facing thebending portion, and an angle of the first hypotenuse to the firstdirection may be different for each transmission portion.

The sixth wiring may include a second extension portion extending fromthe bending portion of the sixth wiring toward the transmission portion.

The second extension portion may have a triangle shape in a plan view.

The first extension portion may include a same material (e.g., be thesame in material) as the fourth wiring, and the second extension portionmay include a same material (e.g., be the same in material) as the sixthwiring.

The second extension portion may include a second hypotenuse facing thebending portion, and an angle of the second hypotenuse to the firstdirection may be different from the angle of the first hypotenuse to thefirst direction.

According to another embodiment of the present disclosure, a displaydevice includes: a substrate including a display area including aplurality of main pixels, and a sensor area including a plurality ofauxiliary pixels and a plurality of transmission portions; and aplurality of wirings arranged along edges of the plurality oftransmission portions and electrically connecting the plurality ofauxiliary pixels to each other. The plurality of wrings includes aplurality of first directional wirings extending in a first directionand arranged in a second direction crossing the first direction, and aplurality of second directional wirings extending in the seconddirection and arranged in the first direction, and each of the pluralityof first directional wirings and the plurality of second directionalwirings includes at least two bending portions at the edges of thetransmission portions.

An area of one of the plurality of transmission portions may be largerthan a light emitting area of one of the plurality of auxiliary pixels.

The plurality of first directional wirings and the plurality of seconddirectional wirings may overlap each other in a thickness direction ofthe substrate in the at least two bending portions.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory, andare intended to provide further explanation of the subject matter of thepresent disclosure as claimed, and equivalents thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the present disclosure and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the present disclosure, and together with the descriptionserve to explain the subject matter of the present disclosure.

FIG. 1 is a schematic perspective view of a display device according toan embodiment.

FIG. 2 is a schematic cross-sectional view of a display device accordingto an embodiment.

FIG. 3 is a schematic plan view of a display device according to anembodiment.

FIG. 4 is a view showing wirings disposed on a transmission portionaccording to an embodiment.

FIGS. 5A and 5B are views showing the diffraction degree of lightemitted from a sensor device when a transmission portion has arectangular shape.

FIGS. 6A and 6B are views showing the diffraction degree of lightemitted from a sensor device when a transmission portion has a circularshape.

FIG. 7 is an equivalent circuit diagram of a pixel for performing activematrix driving that may be disposed in a display area of a displaydevice according to an embodiment.

FIG. 8 is a plan view specifically showing an auxiliary pixel accordingto an embodiment.

FIG. 9 is a cross-sectional view taken along the line I-I′ of FIG. 8.

FIG. 10 is an enlarged view of the area A of FIG. 4 according to anembodiment.

FIG. 11 is a cross-sectional view taken along the line III-III′ of FIG.10.

FIG. 12 is a cross-sectional view taken along the line IV-IV′ of FIG.10.

FIG. 13 is an enlarged view of the area A of FIG. 4 according to anotherembodiment.

FIGS. 14A and 14B are each an enlarged view of the area A of FIG. 4according to other embodiments.

FIG. 15 is an enlarged view of the area B of FIG. 4 according to anotherembodiment.

FIG. 16 is a view showing wirings disposed on a transmission portionaccording to another embodiment.

FIG. 17 is a view showing wirings disposed on a transmission portionaccording to another embodiment.

FIG. 18 is an enlarged view of the area C of FIG. 17.

FIG. 19 is a view showing wirings disposed on a transmission portionaccording to another embodiment.

FIG. 20 is an enlarged view of the area D of FIG. 19.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments of the presentdisclosure. As used herein “embodiments” are interchangeable words thatare non-limiting examples of devices or methods employing one or more ofthe inventive concepts disclosed herein. It is apparent, however, thatvarious exemplary embodiments may be practiced without these specificdetails or with one or more equivalent arrangements. In other instances,known (e.g., well-known) structures and devices are shown in blockdiagram form in order to avoid unnecessarily obscuring various exemplaryembodiments. Further, various exemplary embodiments may be different,but do not have to be exclusive. For example, specific shapes,configurations, and/or characteristics of an exemplary embodiment may beutilized or implemented in another exemplary embodiment withoutdeparting from the subject matter of the present disclosure.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail of someways in which the subject matter of the present disclosure may beimplemented in practice. Therefore, unless otherwise specified, thefeatures, sensor devices, modules, layers, films, panels, regions,and/or aspects, etc. (hereinafter individually or collectively referredto as “elements”), of the various embodiments may be otherwise combined,separated, interchanged, and/or rearranged without departing from thesubject matter of the present disclosure.

The use of cross-hatching and/or shading in the accompanying drawings isgenerally provided to clarify boundaries between adjacent elements. Assuch, neither the presence nor the absence of cross-hatching or shadingconveys or indicates any preference or requirement for particularmaterials, material properties, dimensions, proportions, commonalitiesbetween illustrated elements, and/or any other characteristic,attribute, property, etc., of the elements, unless otherwise specified.Further, in the accompanying drawings, the size and relative sizes ofelements may be exaggerated for clarity and/or descriptive purposes.When an exemplary embodiment may be implemented differently, a specificprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order. Also, like reference numerals denote like elements.

When an element, such as a layer, is referred to as being “on,”“connected to,” or “coupled to” another element or layer, it may bedirectly on, connected to, or coupled to the other element or layer orintervening elements or layers may be present. When, however, an elementor layer is referred to as being “directly on,” “directly connected to,”or “directly coupled to” another element or layer, there are nointervening elements or layers present. To this end, the term“connected” may refer to physical, electrical, and/or fluid connection,with or without intervening elements. Further, the D1-axis, the D2-axis,and the D3-axis are not limited to three axes of a rectangularcoordinate system, such as the x, y, and z-axes, and may be interpretedin a broader sense. For example, the D1-axis, the D2-axis, and theD3-axis may be perpendicular to one another, or may represent differentdirections that are not perpendicular to one another. For the purposesof this disclosure, “at least one of X, Y, and Z” and “at least oneselected from the group consisting of X, Y, and Z” may be construed as Xonly, Y only, Z only, or any combination of two or more of X, Y, and Z,such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Although the terms “first,” “second,” etc., may be used herein todescribe various elements, these elements should not be limited by theseterms. These terms are used to distinguish one element from anotherelement. Thus, a first element discussed below could be termed a secondelement without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,”“above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), andthe like, may be used herein for descriptive purposes, and, thereby, todescribe one element's relationship to another element(s) as illustratedin the drawings. Spatially relative terms are intended to encompassdifferent orientations of an apparatus in use, operation, and/ormanufacture in addition to the orientation depicted in the drawings. Forexample, if the apparatus in the drawings is turned over, elementsdescribed as “below” or “beneath” other elements or features would thenbe oriented “above” the other elements or features. Thus, the exemplaryterm “below” can encompass both an orientation of above and below.Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90degrees or at other orientations), and, as such, the spatially relativedescriptors used herein should be interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, sensor devices, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, sensordevices, and/or groups thereof. It is also noted that, as used herein,the terms “substantially,” “about,” and other similar terms, are used asterms of approximation and not as terms of degree, and, as such, areutilized to account for inherent deviations in measured, calculated,and/or provided values that would be recognized by one of ordinary skillin the art.

Various exemplary embodiments are described herein with reference tosectional and/or exploded illustrations that are schematic illustrationsof idealized exemplary embodiments and/or intermediate structures. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should notnecessarily be construed as limited to the particular illustrated shapesof regions, but are to include deviations in shapes that result from,for instance, manufacturing. In this manner, regions illustrated in thedrawings may be schematic in nature and the shapes of these regions maynot reflect actual shapes of regions of a device and, as such, are notnecessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and should not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 is a schematic perspective view of a display device according toan embodiment. Referring to FIG. 1, a display device 1 includes adisplay area DA for implementing (e.g., displaying) an image and anon-display area NDA for not implementing an image. The display device 1may provide a main image by utilizing light emitted from a plurality ofmain pixels Pm arranged in the display area DA.

The display device 1 includes a sensor area SA. As will be described inmore detail later with reference to FIG. 2, the sensor area SA may be anarea in which a sensor device (such as a sensor) utilizing infraredlight, visible light, and/or sound is disposed. The sensor area SA mayinclude a transmission portion (e.g., a transmission area) TA throughwhich light and/or sound output from the sensor device to the outside ortraveling toward the sensor device from the outside may be transmitted.

A plurality of auxiliary pixels Pa may be arranged, and a set orpredetermined image may be provided by utilizing light emitted from theplurality of auxiliary pixels Pa. The image provided from the sensorarea SA may be an auxiliary image, and may have a lower resolution thanthe image provided from the display area DA. That is, because the sensorarea SA includes a transmission portion TA through which light and/orsound is transmitted, the number of auxiliary pixels Pa per unit areamay be smaller than the number of main pixels Pm per unit area.

The sensor area SA may be disposed at one side of the display area DA.In an embodiment, it is shown in FIG. 1 that the sensor area SA isdisposed at the upper side of the display area DA, and is disposedbetween the non-display area NDA and the display area DA.

Hereinafter, although an organic light emitting display device isdescribed as an example of the display device 1 according to anembodiment of the present disclosure, the display device of the presentdisclosure is not limited thereto. In another embodiment, varioussuitable kinds (types) of display devices such as an inorganic lightemitting display device and/or a quantum dot light emitting displaydevice may be utilized as the display device 1.

Although it is shown in FIG. 1 that the sensor area SA is disposed atthe upper side of the display area DA having a rectangular shape, thepresent disclosure is not limited thereto. The shape of the display areaDA may be a circle, an ellipse, or a polygon such as a triangle or apentagon. The position and number of the sensor areas SA may also bechanged in various suitable ways.

FIG. 2 is a schematic cross-sectional view of a display device accordingto embodiments, and may correspond to a cross-section taken along theline A-A′ of FIG. 1.

Referring to FIG. 2, the display device 1 may include a display panel PNincluding a display element, and a sensor device corresponding to thesensor area SA.

The display panel PN may include a substrate SUB1, a display elementlayer DE disposed on the substrate SUB1, and a thin film encapsulationlayer TFE that is an encapsulation member for encapsulating the displayelement layer DE. The display panel PN may further include a cover padCP disposed under the substrate SUB1.

The substrate SUB1 may include glass or a polymer resin. Examples of thepolymer resin may include polyethersulfone (PES), polyacrylate (PAR),polyetherimide (PEI), polyethyelene napthalate (PEN), polyethyeleneterepthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide(PI), polycarbonate (PC), and cellulose acetate propionate (CAP). Thesubstrate SUB1 including the polymer resin may have flexible, rollable,and/or bendable characteristics. In one embodiment, the substrate SUB1may have a multilayer structure including a layer including theaforementioned polymer resin and an inorganic layer.

The display element layer DE may include a circuit layer including athin film transistor TFT or TFT′, an organic light emitting diode OLEDor OLED′ as a display element, and an insulating layer IL or IL′disposed therebetween.

The display area DA may be provided with a main pixel Pm including amain thin film transistor TFT and an organic light emitting diode OLEDconnected to the main thin film transistor TFT, and the sensor area SAmay be provided with an auxiliary pixel Pa including an auxiliary thinfilm transistor TFT′ and an organic light emitting diode OLED′ connectedto the auxiliary thin film transistor TFT′.

The sensor area SA may be provided with a transmission portion in whichthe auxiliary thin film transistor TFT′ and the display element are notdisposed. The transmission portion TA may be understood as a regionthrough which light/signal emitted from a sensor device SS orlight/signal incident to the sensor device SS is transmitted.

The sensor device SS may be located in the sensor area SA. The sensordevice SS may be an electronic element utilizing light or sound. Forexample, the sensor device SS may be a sensor for receiving andutilizing light (such as an infrared sensor), a sensor for measuring adistance or recognizing a fingerprint by outputting and detecting lightor sound, a small lamp for outputting light, a speaker for outputtingsound, and/or a camera for taking an image. The electronic elementutilizing light may also use light of various suitable wavelength bands,such as visible light, infrared light, and/or ultraviolet light. Thenumber of sensor devices SS arranged in the sensor area SA may beprovided in plural. For example, as the sensor devices SS, a lightemitting element and a light receiving device may be provided togetherin one sensor area SA. In one alternative embodiment, a light emittingunit and a light receiving unit may be concurrently or simultaneouslyprovided in one sensor device SS. Although it is shown in the drawingsthat one sensor device SS is disposed to corresponds to one auxiliarypixel Pa and the transmission portion TA for convenience of explanation,one sensor device SS may be disposed to correspond to a plurality ofauxiliary pixels Pa and the transmission portion TA.

A lower metal layer BSM may be disposed in the sensor area SA. The lowermetal layer BSM may be disposed under the auxiliary thin film transistorTFT′ to correspond to the auxiliary thin film transistor TFT′. The lowermetal layer BSM may prevent or substantially prevent external light fromreaching the auxiliary pixel Pa including the auxiliary thin filmtransistor TFT′. For example, the lower metal layer BSM may prevent orsubstantially prevent light emitted from the sensor device SS fromreaching the auxiliary pixel Pa.

In some embodiments, a constant voltage or a signal is applied to thelower metal layer BSM to reduce or prevent damage to the pixel circuitdue to electrostatic discharge.

The thin film encapsulation layer TFE may include at least one inorganicencapsulation layer and at least one organic encapsulation layer. Inthis regard, FIG. 2 shows first and second inorganic encapsulationlayers TFE1 and TFE3 and an organic encapsulation layer TFE2 between thefirst and second inorganic encapsulation layers TFE1 and TFE3.

The first and second inorganic encapsulation layers TFE1 and TFE3 mayinclude at least one inorganic insulating material selected fromaluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zincoxide, silicon oxide, silicon nitride, and silicon oxynitride. Theorganic encapsulation layer TFE2 may include a polymer-based material.Examples of the polymer-based material may include acrylic resin, epoxyresin, polyimide, and polyethylene.

The cover pad CP may be attached to the lower surface of the substrateSUB1. The cover pad CP may have an opening CP_OP corresponding to thesensor area SA. The opening CP_OP is provided in the cover pad CP,thereby improving the light transmittance of the sensor area SA.

In one or more embodiments, the cover pad CP may include a protectivelayer and/or a cushion layer.

The protective layer may protect the substrate SUB1 from external impactoccurring at (e.g., applied through) the bottom of the substrate SUB1.For example, the protective layer may protect the substrate SUB1 fromcontamination, scratch, and/or impact that may occur in the process ofmanufacturing and/or utilizing the display device. The protective layermay contain ingredients such as fine powder silica, a silicone-basedantifoaming agent, an additive, an antistatic agent, a petroleum naphthasolvent, and/or diethylene glycol monoethyl ether acetate.

The cushion layer may be disposed on the lower surface of the protectivelayer. The cushion layer has an adhesive layer on one surface thereof,and may thus be attached to the lower surface of the protective layerthrough the adhesive layer.

The cushion layer may include a buffer member that can absorb externalshocks. The buffer member may include a material capable of absorbingshocks. In an embodiment, the buffer member may be formed of a sponge inwhich an elastic polymer resin, a rubber liquid, a urethane material,and/or an acrylic material is foamed.

The cushion layer may further include a light blocking member forpreventing or substantially preventing light emitted from the substrateSUB1 from leaking to the bottom of the substrate SUB1 and/or a heatradiation member for radiating the heat generated by the display device1 in addition to the aforementioned buffer member. The heat radiationmember may include a metal having suitable (e.g., excellent) thermalconductivity (such as copper (Cu), silver (Ag), a copper alloy, and/oraluminum (Al)), or may include a carbon-based material (such as graphiteand/or graphene). The aforementioned buffer member, light blockingmember, and heat radiation member may be stacked in a thicknessdirection.

In one or more embodiments, a lower protective film for supporting andprotecting the substrate SUB1 may be further provided between thesubstrate SUB1 and the panel bottom cover CP.

The lower protective film may be disposed to overlap the entire sensorarea SA, and may include polyethylene terephthalate (PET) and/orpolyimide (PI).

The area of the sensor area SA may be larger than the area in which thesensor device SS is disposed. Accordingly, the area of the opening CP_OPprovided in the cover pad CP may not match the area of the sensor areaSA. For example, the area of the opening CP_OP may be smaller than thearea of the sensor area SA.

A plurality of sensor devices SS may be disposed in the sensor area SA.The plurality of sensor devices SS may have different functions fromeach other.

In one or more embodiments, the display panel PN may further be providedthereon with an input detecting member for detecting a touch input, ananti-reflective member including a polarizer and a retarder or a colorfilter and a black matrix, and/or a transparent window.

Meanwhile, although it is described in the present embodiment that thethin film encapsulation layer TFE is utilized as an encapsulation memberfor encapsulating the display element layer DE, the present disclosureis not limited thereto. For example, an encapsulation substrate attachedto the substrate SUB1 by sealant and/or frit may be utilized as theencapsulation member for encapsulating the display element layer DE.

FIG. 3 is a schematic plan view of a display device according to anembodiment.

Referring to FIG. 3, the display panel PN is disposed in the displayarea DA and includes a plurality of main pixels Pm. Each of the mainpixels Pm may include a display element such as an organic lightemitting diode. Each main pixel Pm may emit, for example, red, green,blue or white light through the organic light emitting diode. Asutilized herein, as described above, the main pixel Pm may be understoodas a sub-pixel that emits light of any one of red, green, blue, andwhite colors. The display area DA may be covered by the encapsulationmember described above with reference to FIG. 2 to protect the displayarea DA from external air and/or moisture.

The sensor area SA may be disposed at one side of the display area DA,and a plurality of auxiliary pixels Pa may be arranged in the sensorarea SA. Each of the auxiliary pixels Pa may include a display elementsuch as an organic light emitting diode. Each auxiliary pixel Pa mayemit, for example, red, green, blue, or white light through the organiclight emitting diode. As used herein, as described above, the auxiliarypixel Pa may be understood as a sub-pixel that emits light of any one ofred, green, blue, and white colors. Meanwhile, the sensor area SA may beprovided with a transmission portion TA disposed between the auxiliarypixels Pa. At least one sensor device SS may be disposed to correspondto the lower portion of the sensor area SA of the display panel PN.

In an embodiment, one main pixel Pm and one auxiliary pixel Pa mayinclude the same pixel circuit. However, the present disclosure is notlimited thereto. The pixel circuit included in the main pixel Pm and thepixel circuit included in the auxiliary pixel Pa may be different fromeach other.

Because the sensor area SA includes the transmission portion TA, theresolution of the sensor area SA may be lower than that of the displayarea DA. For example, the resolution of the sensor area SA may be about½ of that of the display area DA.

Each of the pixels Pm and Pa may be electrically connected to externalcircuits arranged in the non-display area. A first scan driving circuitDC1, a second scan driving circuit DC2, a terminal TM, a data drivingcircuit DD, a first power supply line PSL1, and a second power supplyline PSL2 are arranged in the non-display area NDA.

The first scan driving circuit DC1 may provide a scan signal to each ofthe pixels Pm and Pa through a scan line SL. The first scan drivingcircuit DC1 may provide a light emission control signal to each pixelthrough a light emission control line EL. The second scan drivingcircuit DC2 may be disposed in parallel with the first scan drivingcircuit DC1 with the display area DA interposed therebetween. Some ofthe pixels Pm and Pa disposed in the display area DA may be electricallyconnected to the first scan driving circuit DC1, and the others of thepixels Pm and Pa may be connected to the second scan driving circuitDC2. In another embodiment, the second scan driving circuit DC2 may beomitted.

The terminal TM may be disposed at one side of the substrate SUB1. Theterminal TM may be exposed without being covered by the insulating layerand electrically connected to a printed circuit board PCB. The terminalPCB-P of the printed circuit board PCB may be electrically connected tothe terminal TM of the display panel PN. The printed circuit board PCBtransmits a signal or power of a controller to the display panel PN. Thecontrol signal generated by the controller may be transmitted to thefirst and second scan driving circuits DC1 and DC2 through the printedcircuit board PCB. The controller may provide first and second powerVDDL and VSSL (refer to FIG. 7 to be described later) to the first andsecond power supply lines PSL1 and PSL2, respectively, through the firstand second connection lines PBL1 and PBL2. The first power supplyvoltage VDD is provided to each of the pixels Pm and Pa through thedriving voltage line PL connected to the first power supply line PSL1,and the second power supply voltage ELVSS may be provided to a counterelectrode of each of the pixels Pm and Pa connected to the second powersupply line PSL2.

The data driving circuit DD is electrically connected to the data lineDL. The data signal of the data driving circuit DD may be provided toeach of the pixels Pm and Pa through the connection line DBL connectedto the terminal TM and the data line DL connected to the connection lineDBL. Although it is shown in FIG. 3 that the data driving circuit DD isdisposed on the printed circuit board PCB, in another embodiment, thedata driving circuit DD may be disposed on the substrate SUB1. Forexample, the data driving circuit DD may be disposed between theterminal TM and the first power supply line PSL1.

The first power supply line PSL1 may include a first sub-line SBL1 and asecond sub-line SBL2 extending in parallel to each other along the Xdirection with the display area DA interposed therebetween. The secondpower supply line PSL2 may partially surround the display area DA in aloop shape with one side open.

FIG. 4 is a view showing wrings disposed on a transmission portionaccording to an embodiment.

Referring to FIG. 4, the sensor area SA may include a plurality ofauxiliary pixels Pa, transmission portions TA, and a plurality of linesVIL, SLK-1, SLK, ELK, DL, and VDDL2 connecting the plurality ofauxiliary pixels Pa.

At least one pixel Pa may be included in a pixel group Pg. It is shownin FIG. 4 that one pixel group Pg includes eight auxiliary pixels Paarranged in two rows and four columns. However, the present disclosureis not limited thereto. The number and arrangement of the pixels Pa andPm included in one pixel group Pg may be variously suitably changed. Forexample, one pixel group Pg may include three auxiliary pixels Paarranged in one row and three columns, or may include four auxiliarypixels Pa arranged in two rows and two columns. As used herein, theauxiliary pixels Pa may refer to sub-pixels that emit light of red,green, blue, and white colors.

The transmission portion TA is a region having high light transmittancebecause no display element is disposed, and the sensor area SA may beprovided with a plurality of transmission portions TA. The transmissionportions TA may be alternately arranged with the pixel group Pg alongthe first direction X and/or the second direction Y. In one alternativeembodiment, the transmission portions TA may be disposed to surround thepixel group Pg. In one alternative embodiment, the auxiliary pixels Pamay be disposed to surround the transmission portion TA.

The size of the transmission portion TA may be larger than that of thelight emitting region of the at least one auxiliary pixel Pa. In someembodiments, the size of the transmission portion TA may be equal to orlarger than the size of one pixel group Pg.

The plurality of pixel groups Pg may be electrically connected to eachother through the plurality of lines VIL, SLK-1, SLK, ELK, DL, andVDDL2. For example, the pixels groups Pg arranged in a matrix form maybe electrically connected to each other by four lines VIL, SLK-1, SLK,and ELK extending in the first direction X and two lines DL and VDDL2extending in the second direction Y.

According to an embodiment, the four lines VIL, SLK-1, SLK, and ELKextending in the first direction X may include an initialization voltageline VIL, a K−1th (i.e., (k−1)th) scan line SLK-1, a Kth scan line SLK,and a light emission control line ELK. The two lines DL and VDDL2extending in the second direction Y may include a data line DL and adriving voltage line VDDL2.

When the plurality of lines VIL, SLK-1, SLK, ELK, DL, and VDDL2 areformed on the transmission portion TA, the plurality of wirings VIL,SLK-1, SLK, ELK, DL, and VDDL2 may be arranged along the shape of theedge of the transmission portion TA for the light transmittance of thetransmission portion TA. For example, the shape of the transmissionportion TA surrounded by the plurality of pixel groups Pg may be aquadrangle, and the plurality of lines VIL, SLK-1, SLK, ELK, DL, andVDDL2 may be formed to be bent at right angles near four vertices of thequadrangle.

Some of the plurality of lines VIL, SLK-1, SLK, ELK, DL, and VDDL2 maybe disposed to overlap each other in the third direction (Z direction).As shown in FIG. 4, based on the rectangular transmission portion TAdisposed at the center, the data lines DL extending in the seconddirection (Y direction) on the two auxiliary pixels Pa arranged in onerow of the auxiliary pixels Pa (as part of the pixel group Pg arrangedin two rows and four columns) adjacent to the upper side of thetransmission portion TA may be disposed to overlap the initializationvoltage line VIL, the K−1th scan line SLK-1, the Kth scan line SLK, andthe light emission control line ELK, which are extended in the firstdirection (X direction) and sequentially arranged in the seconddirection (Y direction), in the third direction (Z direction) in someareas.

The lines ELK disposed closest to the center of the transmission portionTA may include an extension portion ELK_EX in some areas. For example,the extension portion ELK_EX may be formed in a triangular shape in oneregion of the control line ELK. One region of the control line ELK maybe a bending portion formed by bending at the four vertices of therectangular transmission portion TA at right angles. That is, therectangular transmission portion TA includes the extension portionsELK_EX at four vertices, and as a result, may have an octagonal shape.

Referring to FIG. 2, a sensor device (such as a sensor) utilizinginfrared light, visible light and/or sound may be disposed under theplurality of transmission portions TA. That is, light and/or soundoutput from the sensor device toward the outside or traveling from theoutside toward the sensor device may be transmitted through theplurality of transmission portions. According to an embodiment, when adeposition material including an opaque metal ingredient is deposited onthe transmission portion TA, light transmittance may be reduced by about30% or more. The plurality of lines VIL, SLK-1, SLK, ELK, DL, and VDDL2and the plurality of extension portions ELK_EX disposed on thetransmission portion TA may include opaque metals. Hereinafter, thereason why the extension portion ELK_EX is disposed on the transmissionportion TA will be described with reference to FIGS. 5 and 6.

FIGS. 5A and 5B are views showing the diffraction degree of lightemitted from a sensor device when a transmission portion has arectangular shape. FIGS. 6A and 6B are views showing the diffractiondegree of light emitted from a sensor device when a transmission portionhas a circular shape.

Referring to FIGS. 5A, 5B, 6A, and 6B, as shown in FIGS. 5A and 6A, theregion marked in black may be contrasted with (e.g., may represent) aregion where the aforementioned display elements are disposed, and therectangular and circular regions marked in white may be contrasted with(e.g., may represent) regions where the transmission portions TA aredisposed.

As shown in FIGS. 5B and 6B, assuming that light is emitted fromrectangular and circular openings, the light passing through therectangular opening is diffracted in a cross shape, whereas the lightpassing through the circular opening does not have a large differencealong up, down, left and right directions. That is, even when the ratioof the rectangular opening and the circular opening (e.g., the ratio ofthe area of the rectangular opening and the circular opening to thetotal area) is the same, the diffraction phenomenon may occur less atthe circular opening rather than the rectangular opening.

The diffraction phenomenon, which is one of representative wavephenomena, is a phenomenon in which waves propagate to the back side ofan obstacle or a narrow gap when a light wave and/or a sound wave passthrough the obstacle or the narrow gap. When there is an obstacle havinga gap in the path of particles, the particles pass through the gap andtravel straight (e.g., along a straight path). In contrast, in the caseof waves, the waves travel not only along a straight path passingthrough the gap, but also to a set or predetermined range around thestraight path. Like this, the diffraction is a phenomenon in which wavesbend and reach the area where particles cannot go.

Light and/or sound output from a sensor device, such as a sensordisposed under the transmission portion TA, toward the outside, ortraveling from the outside toward the sensor device may be transmitted.In this case, the larger the aforementioned diffraction phenomenon, thelower the detection ability of a sensor device (such as a sensor). Thereason for this is that the amount of light and/or sound traveling inthe straight path may be reduced because the waves travel not only alonga straight path passing through the gap, but also to a set orpredetermined range around the straight path in accordance with anincrease in diffraction. That is, the emission amount and incidentamount of light and/or sound utilized by a sensor device (such as asensor) may be reduced. Accordingly, in order to maintain a gooddetection force of a sensor device (such as a sensor) disposed under thetransmission portion TA, it is desirable to reduce or minimize thediffraction phenomenon of the transmission portion TA.

Hereinafter, an arrangement relationship of the plurality of linesarranged on the plurality of auxiliary pixels Pa and a plurality oftransmission portions TA will be described in more detail with referenceto FIGS. 7 to 12.

FIG. 7 is a circuit diagram specifically illustrating a sub-pixelaccording to an embodiment.

Referring to FIG. 7, a pixel circuit PC may be connected to a k−1th (kis a positive integer of 2 or more) scan line SLK-1, a kth scan lineSLK, and a jth (j is a positive integer) data line Dj. Further, thepixel circuit PC may be connected to a first driving voltage line VDDLto which a first driving voltage is supplied, an initialization voltageline VIL to which an initialization voltage Vini is supplied, and asecond driving voltage line VSSL to which a second driving voltage issupplied.

The pixel circuit PC includes a driving transistor DT, a light emittingelement EL, switching elements, and a first capacitor C1. The switchingelements include first to sixth transistors ST1, ST2, ST3, ST4, ST5, andST6.

The driving transistor DT may include a gate electrode, a firstelectrode, and a second electrode. The gate electrode may be an uppergate electrode disposed on the active layer of the driving transistorDT.

The gate electrode of the driving transistor DT may be connected to thefirst electrode of the capacitor C, the first electrode of the drivingtransistor DT may be connected to the first driving voltage line VDDLthrough the fifth transistor ST5, and the second electrode of thedriving transistor DT may be electrically connected to the pixelelectrode of the main organic light emitting element EL through thesixth transistor ST6. The driving transistor DT receives a data signalaccording to the switching operation of the second transistor ST2 andsupplies a driving current Ids to the main organic light emittingelement EL.

The light emitting element EL emits light according to the drivingcurrent Ids. The amount of light emitted by the light emitting elementEL may be proportional to the driving current Ids.

The light emitting element EL may be an organic light emitting diodeincluding an anode electrode, a cathode electrode, and an organic lightemitting layer disposed between the anode electrode and the cathodeelectrode. In one alternative embodiment, the light emitting element ELmay be an inorganic light emitting element including an anode electrode,a cathode electrode, and an inorganic semiconductor layer disposedbetween the anode electrode and the cathode electrode. In onealternative embodiment, the light emitting element EL may be a quantumdot light emitting element including an anode electrode, a cathodeelectrode, and a quantum dot light emitting layer disposed between theanode electrode and the cathode electrode. In one alternativeembodiment, the light emitting element EL may be a micro light emittingdiode.

The anode electrode of the light emitting device EL may be connected tothe first electrode of the fourth transistor ST4 and the secondelectrode of the sixth transistor ST6, and the cathode electrode of thelight emitting element EL may be connected to the second driving voltageline VSSL.

The first transistor ST1 may be formed as a dual transistor including afirst-first transistor ST1-1 and a first-second transistor ST1-2. Thegate electrode of the first-first transistor ST1-1 may be connected tothe k−1th scan line SLk-1, the first electrode thereof may be connectedto the gate electrode of the driving transistor DT, and the secondelectrode thereof may be connected to the first electrode of thefirst-second transistor ST1-2. The gate electrode of the first-secondtransistor ST1-2 may be connected to the k−1th scan line SLk-1, thefirst electrode thereof may be connected to the second electrode of thefirst-first transistor ST1-1, and the second electrode thereof may beconnected to the initialization voltage line VIL.

The second transistor ST2 is turned on by the scan signal of the kthscan line SLk to connect the first electrode of the driving transistorDT to the jth data line Dj. The gate electrode of the second transistorST2 may be connected to the kth scan line SLk, the first electrodethereof may be connected to the first electrode of the drivingtransistor DT, and the second electrode thereof may be connected to thedata line Dj.

The third transistor ST3 may be formed as a dual transistor including athird-first transistor ST3-1 and a third-second transistor ST3-2. Thethird-first transistor ST3-1 and the third-second transistor ST3-2 areturned on by the scan signal of the kth scan line SLk to connect thegate electrode and second electrode of the driving transistor DT. Thatis, when third-first transistor ST3-1 and the third-second transistorST3-2 are turned on, the gate electrode and the second electrode of thedriving transistor DT are connected to each other, so that the drivingtransistor DT is driven by a diode. The gate electrode of thethird-first transistor ST3-1 may be connected to the kth scan line SLk,the first electrode thereof may be connected to the second electrode ofthe third-second transistor ST3-2, and the second electrode thereof maybe connected to the gate electrode of the driving transistor DT. Thegate electrode of the second transistor ST2 may be connected to the kthscan line SLk, the first electrode thereof may be connected to thesecond electrode of the driving transistor DT, and the second electrodethereof may be connected to the jth data line Dj.

The fourth transistor ST4 is turned on by the scan signal of the k+1thscan line SLk to connect the anode electrode of the light emittingelement EL to the initialization voltage line VIL. The anode electrodeof the light emitting element EL may be discharged to an initializationvoltage. The gate electrode of the fourth transistor ST4 may beconnected to the k+1th scan line SLk, the first electrode thereof may beconnected to the anode electrode of the light emitting element EL, andthe second electrode thereof may be connected to the initializationvoltage line VIL.

The fifth transistor ST5 is turned on by the light emission controlsignal of the kth light emission line Ek to connect the first electrodeof the driving transistor DT to the first driving voltage line VDDL. Thegate electrode of the fifth transistor ST5 may be connected to the kthlight emission line Ek, the first electrode thereof may be connected tothe first driving voltage line VDDL, and the second electrode thereofmay be connected to the source electrode of the driving transistor DT.

The sixth transistor ST6 is connected between the second electrode ofthe driving transistor DT and the anode electrode of the light emittingelement EL. The sixth transistor ST6 is turned on by the light emissioncontrol signal of the kth light emission line Ek to connect the secondelectrode of the driving transistor DT to the anode electrode of thelight emitting element EL. The gate electrode of the sixth transistorST6 may be connected to the kth light emission line Ek, the firstelectrode thereof may be connected to the second electrode of thedriving transistor DT, and the second electrode thereof may be connectedto the anode electrode of the light emitting element EL. When both thefifth transistor ST5 and the sixth transistor ST6 are turned on, thedriving current Ids may be supplied to the light emitting element EL.

The first capacitor C1 is formed between the gate electrode of thedriving transistor DT and the first driving voltage line VDDL. The firstelectrode of the first capacitor C1 may be connected to the gateelectrode of the driving transistor DT, and the second electrode may beconnected to the first driving voltage line VDDL.

When the first electrode of each of the first to sixth transistors ST1,ST2, ST3, ST4, ST5, ST6, and the driving transistor DT is a sourceelectrode, the second electrode thereof may each be a drain electrode.In one alternative embodiment, when the first electrode of each of thefirst to sixth transistors ST1, ST2, ST3, ST4, ST5, ST6, and the drivingtransistor DT is a drain electrode, the second electrode thereof mayeach be a source electrode.

The active layer of each of the first to sixth transistors ST1, ST2,ST3, ST4, ST5, ST6, and the driving transistor DT may be formed of atleast one of polysilicon, amorphous silicon, and an oxide semiconductor.When the semiconductor layer of each of the first to sixth transistorsST1, ST2, ST3, ST4, ST5, ST6, and the driving transistor DT is formed ofpolysilicon, the semiconductor layer thereof may be formed oflow-temperature polysilicon (LTPS).

Although it is shown in FIG. 7 that the first to sixth transistors ST1,ST2, ST3, ST4, ST5, ST6, and the driving transistor DT are formed asP-type metal oxide semiconductor field effect transistors (MOSFETs), thepresent disclosure is not limited thereto, and they may be formed asN-type MOSFETs.

The first driving voltage of the first driving voltage line VDDL, thesecond driving voltage of the second driving voltage line VSSL, and theinitialization voltage of the initialization voltage line VIL may be setin consideration of characteristics of the driving transistor DT andcharacteristics of the light emitting element EL. For example, thevoltage difference between the initialization voltage and the datavoltage supplied to the source electrode of the driving transistor DTmay be set to be smaller than the threshold voltage of the drivingtransistor DT.

FIG. 8 is a plan view specifically showing a pixel circuit according toan embodiment.

Referring to FIG. 8, the pixel circuit PC may include a drivingtransistor DT, first to sixth transistors ST1 to ST6, and a firstcapacitor C1.

The driving transistor DT may include an active layer DT_ACT, a gateelectrode DT_G, a first electrode DT_S, and a second electrode DT_D. Theactive layer DT_ACT of the driving transistor DT may overlap the gateelectrode DT_G of the driving transistor DT. The gate electrode DT_G maybe disposed on the active layer DT_ACT of the driving transistor DT.

The first electrode DT_S of the driving transistor DT may be connectedto the first electrode S2 of the second transistor ST2. The secondelectrode DT_D of the driving transistor DT may be connected to thefirst electrode S3-1 of the 3-1 transistor ST3-1 and the first electrodeS6 of the sixth transistor ST6.

The first transistor ST1 may be formed as a dual transistor. The firsttransistor ST1 may include a first-first transistor ST1-1 and afirst-second transistor ST1-2.

The first-first transistor ST1-1 may include an active layer ACT1-1, agate electrode G1-1, a first electrode S1-1, and a second electrodeD1-1. The gate electrode G1-1 of the first-first transistor ST1-1, whichis a part of the k−1 scan line SLk-1, may be an overlapping regionbetween the active layer ACT1-1 of the first-first transistor ST1-1 andthe k−1th scan line SLk-1. The first electrode S1-1 of the first-firsttransistor ST1-1 may be connected to a connection electrode BE of thedriving transistor DT through a second contact hole CNT2. The secondelectrode D1-1 of the first-first transistor ST1-1 may be connected tothe first electrode S1-2 of the first-second transistor ST1-2.

The first-second transistor ST1-2 may include an active layer ACT1-2, agate electrode G1-2, a first electrode S1-2, and a second electrodeD1-2. The gate electrode G1-2 of the first-second transistor ST1-2,which is a part of the k−1 scan line SLk-1, may be an overlapping regionbetween the active layer ACT1-2 of the first-second transistor ST1-2 andthe k−1th scan line SLk-1. The first electrode S1-2 of the first-secondtransistor ST1-2 may be connected to the second electrode D1-1 of thefirst-first transistor ST1-1. The second electrode D1-2 of thefirst-second transistor ST1-2 may be connected to an initializationconnection electrode VIE through a fourth contact hole CNT4.

The second transistor ST2 may include an active layer ACT2, a gateelectrode G2, a first electrode S2, and a second electrode D2. The gateelectrode G2 of the second transistor ST2, which is a part of the kthscan line SLk (k is a positive integer of 2 or more), may be anoverlapping region between the active layer ACT2 of the secondtransistor ST2 and the kth scan line SLk. The first electrode S2 of thesecond transistor ST2 may be connected to the first electrode DT_S ofthe driving transistor DT. The second electrode D2 of the secondtransistor ST2 may be connected to the jth data line DL through a thirdcontact hole CNT3.

The third transistor ST3 may be formed as a dual transistor. The thirdtransistor ST3 may include a third-first transistor ST3-1 and athird-second transistor ST3-2.

The third-first transistor ST3-1 may include an active layer ACT3-1, agate electrode G3-1, a first electrode S3-1, and a second electrodeD3-1. The gate electrode G3-1 of the third-first transistor ST3-1, whichis a part of the kth scan line SLk, may be an overlapping region betweenthe active layer ACT3-1 of the third-first transistor ST3-1 and the kthscan line SLk. The first electrode S3-1 of the third-first transistorST3-1 may be connected to the second electrode S3-2 of the third-secondtransistor ST3-2. The first electrode S3-1 of the third-first transistorST3-1 may be connected to the second electrode DT_D of the drivingtransistor DT. The second electrode D3-1 of the third-first transistorST3-1 may be connected to the first electrode S3-2 of the third-secondtransistor ST3-2.

The third-second transistor ST3-2 may include an active layer ACT3-2, agate electrode G3-2, a first electrode S3-2, and a second electrodeD3-2. The gate electrode G3-2 of the third-second transistor ST3-2,which is a part of the kth scan line SLk, may be an overlapping regionbetween the active layer ACT3-2 of the third-second transistor ST3-2 andthe k-th scan line SLk. The second electrode D3-2 of the third-secondtransistor ST3-2 may be connected to the connection electrode BE throughthe second contact hole CNT2.

The fourth transistor ST4 may include an active layer ACT4, a gateelectrode G4, a first electrode S4, and a second electrode D4. The gateelectrode G4 of the fourth transistor ST4, which is a part of the k−1thscan line SLk-1, may be an overlapping region between the active layerACT4 of the fourth transistor ST4 and the k−1th scan line SLk-1. Thefirst electrode S4 of the fourth transistor ST4 may be connected to ananode connection electrode ANDE through a sixth contact hole CNT6. Theanode electrode AND of the light emitting element may be connected tothe anode connection electrode ANDE through an anode contact holeAND_CNT. The second electrode D4 of the fourth transistor ST4 may beconnected to the initialization connection electrode VIE through thefourth contact hole CNT4. The initialization voltage line VIL may beconnected to the initialization connection electrode VIE through thefifth contact hole CNT5, and the initialization connection electrode VIEmay be connected to the second electrode D3-2 of the first-secondtransistor ST1-2 and the second electrode D4 of the fourth transistorST4 through the fourth contact hole CNT4. The initialization connectionelectrode VIE may be disposed to intersect the k−1th scan line SLk-1.

The fifth transistor ST5 may include an active layer ACT5, a gateelectrode G5, a first electrode S5, and a second electrode D5. The gateelectrode G5 of the fifth transistor ST5, which is a part of the kthlight emission control line ELk, may be an overlapping region betweenthe active layer ACT5 of the fifth transistor ST5 and the kth lightemission control line ELk. The first electrode S5 of the fifthtransistor ST5 may be connected to a second driving voltage line VDDL2through a seventh contact hole CNT7. The second electrode D5 of thefifth transistor ST5 may be connected to the first electrode DT_S of thedriving transistor DT.

The sixth transistor ST6 may include an active layer ACT6, a gateelectrode G6, a first electrode S6, and a second electrode D6. The gateelectrode G6 of the sixth transistor ST6, which is a part of the kthlight emission control line ELk, may be an overlapping region betweenthe active layer ACT6 and the kth light emission control line ELk of thesixth transistor ST6. The first electrode S6 of the sixth transistor ST6may be connected to the second electrode DT_D of the driving transistorDT. The second electrode D6 of the sixth transistor ST6 may be connectedto the anode electrode AND of the light emitting element through thesixth contact hole CNT6.

The first electrode CE11 of the first capacitor C1 may be a part of thegate electrode DT_G of the driving transistor DT, and the secondelectrode CE12 of the first capacitor C1 may be a first driving voltageline VDDL1 overlapping the gate electrode DT_G of the driving transistorDT. The first driving voltage line VDDL1 may be connected to a seconddriving voltage line VDDL2 through the eighth contact hole CNT8. Thesecond driving voltage line VDDL2 may be disposed in parallel with thejth data line DL, and the first driving voltage line VDDL1 may bedisposed in parallel with the kth scan line SLk.

FIG. 9 is a cross-sectional view taken along the line I-I′ of FIG. 8.

Referring to FIGS. 8 and 9, a thin film transistor layer TFTL, a lightemitting element layer EML, and an encapsulation layer TFE may besequentially formed on a first substrate SUB1.

The thin film transistor layer TFTL includes a lower metal layer BSM, abuffer film BF, an active layer ACT, a first gate layer GTL1, a secondgate layer GTL2, a gate insulating layer 130, a first interlayerinsulating film 141, a first data metal layer DTL1, a second interlayerinsulating film 142, a second data metal layer DTL2, a protective film150, and a planarization film 160.

The lower metal layer BSM may be formed on one surface of the firstsubstrate SUB1. The lower metal layer BSM may be formed as a singlelayer or multiple layers including any one of molybdenum (Mo), aluminum(Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium(Nd), and copper (Cu), or an alloy thereof. According to an embodiment,the lower metal layer BSM may be disposed under the thin film transistorto reduce or prevent the deterioration of characteristics of the thinfilm transistor due to light emitted from the sensor device SS.

The buffer film BF may be formed on the lower metal layer BSM. Thebuffer film BF may be formed on one surface of the first substrate SUB1to protect the thin film transistors 120 and the organic light emittinglayer 172 of the light emitting element layer EML from moisturepenetrating through the first substrate SUB1 vulnerable to moisturepermeation. The buffer film BF may be formed of a plurality of inorganiclayers that are alternately stacked. For example, the buffer film BF maybe formed as a multi-layer film in which one or more inorganic layers ofa silicon nitride layer, a silicon oxynitride layer, a silicon oxidelayer, a titanium oxide layer, and an aluminum oxide layer arealternately stacked. The buffer film BF may be omitted.

The active layer ACT may be formed on the first substrate SUB1 or thebuffer layer BF. The active layer ACT may include polycrystallinesilicon, monocrystalline silicon, low-temperature polycrystallinesilicon, amorphous silicon, and/or an oxide semiconductor. When theactive layer ACT is made of polycrystalline silicon, the ion-dopedactive layer ACT may have conductivity. Thus, the active layer ACT mayinclude not only active layers DT_ACT and ACT1 to ACT6 of a drivingtransistor DT and first to sixth switching transistors ST1 to ST6, butalso source electrodes DT_S, S1, S2-1, S2-2, S3-1, S3-2, S4, S5, S6 anddrain electrodes DT_D, D1, D2-1, D2-2, D3-1, D3-2, D4, D5, D6.

The gate insulating film 130 may be formed on the active layer ACT. Thegate insulating film 130 may be formed of an inorganic layer, forexample, a silicon nitride layer, a silicon oxynitride layer, a siliconoxide layer, a titanium oxide layer, and/or an aluminum oxide layer.

The first gate layer GTL1 may be formed on the gate insulating layer130. The first gate layer GTL1 may include not only a gate electrodesDT_G of the driving transistor DT and gate electrodes G1 to G6 of thefirst to sixth switching transistors ST1 to ST6, but also scan linesSLK-1 and SLK and light emission control lines ELK. The first gate layerGTL1 may be formed as a single layer or multiple layers including anyone of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au),titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloythereof.

The first interlayer insulating film 141 may be formed on the first gatelayer GTL1. The first interlayer insulating film 141 may be formed of aninorganic layer, for example, a silicon nitride layer, a siliconoxynitride layer, a silicon oxide layer, a titanium oxide layer, and/oran aluminum oxide layer. The first interlayer insulating film 141 mayinclude a plurality of inorganic layers.

The second gate layer GTL2 may be formed on the first interlayerinsulating film 141. The second gate layer GTL2 may include aninitialization voltage line VIL and a first driving voltage line VDDL1.The second gate layer GTL2 may be formed as a single layer or multiplelayers including any one of molybdenum (Mo), aluminum (Al), chromium(Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper(Cu), or an alloy thereof.

The second interlayer insulating film 142 may be formed on the secondgate layer GTL2. The second interlayer insulating film 142 may be formedof an inorganic layer, for example, a silicon nitride layer, a siliconoxynitride layer, a silicon oxide layer, a titanium oxide layer, and/oran aluminum oxide layer. The second interlayer insulating film 142 mayinclude a plurality of inorganic layers.

The first data metal layer DTL1 may be formed on the second interlayerinsulating film 142. The first data metal layer DTL1 may include datalines DL, second driving voltage lines VDDL2, a connection electrode BE,an anode connection electrode ANDE, and an initialization connectionelectrode VIE. The first data metal layer DTL1 may be formed as a singlelayer or multiple layers including any one of molybdenum (Mo), aluminum(Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium(Nd), and copper (Cu), or an alloy thereof.

The planarization film 160 may be formed on the first data metal layerDTL1 to planarize the steps due to the active layer ACT, the first gatelayer GTL1, the second gate layer GTL2, and the first data metal layerDTL1. The planarization film 160 may be formed as an organic filmincluding acrylic resin, epoxy resin, phenolic resin, polyamide resin,and/or polyimide resin.

Meanwhile, the protective film 150 may be additionally formed betweenthe first data metal layer DTL1 and the planarization film 160. Theprotective film 150 may be formed of an inorganic layer, for example, asilicon nitride layer, a silicon oxynitride layer, a silicon oxidelayer, a titanium oxide layer, and/or an aluminum oxide layer.

Referring to FIGS. 11 and 12, the second data metal layer DTL2 may beformed on the protective film 150. The second data metal layer DTL2 mayinclude a connection wiring VDDL2_Br of a second driving voltage line,which will be described later. The second data metal layer DTL2 may beformed as a single layer or multiple layers including any one ofmolybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti),nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

Referring to FIGS. 8 and 9 again, as shown in FIG. 8, the drivingtransistor DT and the first to sixth transistors ST1 to ST6 are formedin a top gate method (e.g., a top gate configuration) in which a gateelectrode is located over the active layer. However, the presentdisclosure is not limited thereto. That is, the driving transistor DTand the first to sixth transistors ST1 to ST6 may be formed in a bottomgate method (e.g., a bottom gate configuration) in which a gateelectrode is located under the active layer or a double gate method(e.g., a double gate configuration) in which a gate electrode locatedboth over the active layer and under the active layer.

As shown in FIG. 9, the second connection contact hole BCNT2 may be ahole penetrating through the first interlayer insulating film 141 andthe second interlayer insulating film 142 to expose the gate electrodeDT_G of the driving transistor DT.

The second contact hole CNT2 may be a hole penetrating through the gateinsulating film 130, the first interlayer insulating film 141, and thesecond interlayer insulating film 142 to expose the second electrodeD3-1 of the third-first transistor ST3-1. The connection electrode BEmay be connected to the second electrode D3-1 of the third-firsttransistor ST3-1 through the second contact hole CNT2.

The third contact hole CNT3 may be a hole penetrating through the gateinsulating film 130, the first interlayer insulating film 141, and thesecond interlayer insulating film 142 to expose the first electrode S2of the second transistor ST2. The jth data line DL may be connected tothe first electrode S2 of the second transistor ST2 through the thirdcontact hole CNT3.

The fourth contact hole CNT4 may be a hole penetrating through the gateinsulating film 130, the first interlayer insulating film 141, and thesecond interlayer insulating film 142 to expose the second electrode D1of the first transistor ST1 and the second electrode D4 of the fourthtransistor ST4. The initialization connection electrode VIE may beconnected to the first-second electrode D1-2 of the first-secondtransistor ST1-2 and the second electrode D4 of the fourth transistorST4 through the fourth contact hole CNT4.

The fifth contact hole CNT5 may be a hole penetrating through the secondinterlayer insulating film 142 to expose the initialization voltage lineVIL. The initialization connection electrode VIE may be connected to theinitialization voltage line VIL through the fifth contact hole CNT5.

The sixth contact hole CNT6 may be a hole penetrating through the gateinsulating film 130, the first interlayer insulating film 141, and thesecond interlayer insulating film 142 to expose the second electrode D6of the sixth transistor ST6. The anode connection electrode ANDE may beconnected to the second electrode D6 of the sixth transistor ST6 throughthe sixth contact hole CNT6.

The seventh contact hole CNT7 may be a hole penetrating through the gateinsulating film 130, the first interlayer insulating film 141, and thesecond interlayer insulating film 142 to expose the first electrode S5of the fifth transistor ST5. The second driving voltage line VDDL2 maybe connected to the first electrode S5 of the fifth transistor ST5through the seventh contact hole CNT7.

The eighth contact hole CNT8 may be a hole penetrating through thesecond interlayer insulating film 142 to expose the first drivingvoltage line VDDL1. The second driving voltage line VDDL2 may beconnected to the first driving voltage line VDDL1 through the eighthcontact hole CNT8.

The anode contact hole AND_CNT may be a hole penetrating through theprotective film 150 and the planarization film 160 to expose the anodeconnection electrode ANDE.

The light emitting element layer EML is formed on the thin filmtransistor layer TFTL. The light emitting element layer EML includeslight emitting elements 170 and a pixel defining film 180.

The light emitting elements 170 and the pixel defining film 180 areformed on the planarization film 160. Each of the light emittingelements 170 may include a first electrode 171, an organic lightemitting layer 172, and a second electrode 173.

The first electrode 171 may be formed on the planarization film 160. Thefirst electrode 171 may be connected to the anode connection electrodeANDE through the anode contact hole AND_CNT penetrating through theprotective film 150 and the planarization film 160.

In the top emission structure in which light is emitted toward thesecond electrode 173 based on the organic light emitting layer 172, thefirst electrode 171 may be formed of a material having high reflectivitysuch as a laminate structure (Ti/Al/Ti) of aluminum and titanium, alaminate structure (ITO/Al/ITO) of aluminum and ITO, an APC alloy, or alaminate structure (ITO/APC/ITO) of an APC alloy and ITO. The APC alloyis an alloy of silver (Ag), palladium (Pd), and copper (Cu).

The pixel defining film 180 may be formed to partition the firstelectrode 171 on the planarization film 160 in order to define the lightemitting area EA of each of the auxiliary pixels Pa. The pixel definingfilm 180 may be formed to cover the edge of the first electrode 171. Theplanarization film 160 may be formed as an organic film includingacrylic resin, epoxy resin, phenolic resin, polyamide resin, orpolyimide resin.

The light emitting area EA of each of the auxiliary pixels Pa refers toan area in which the first electrode 171, the organic light emittinglayer 172, and the second electrode 173 are sequentially stacked, andholes from the first electrode 171 are combined with electrons from thesecond electrode to emit light.

The organic light emitting layer 172 is formed on the first electrode171 and the pixel defining film 180. The organic light emitting layer172 may include an organic material to emit light of a set orpredetermined color. For example, the organic light emitting layer 172may include a hole transporting layer, an organic material layer, and anelectron transporting layer.

The second electrode 173 is formed on the organic light emitting layer172. The second electrode 173 may be formed to cover the organic lightemitting layer 172. The second electrode 173 may be a common layercommonly formed in sub-pixels SP1, SP2, and SP3. A capping layer may beformed on the second electrode 173.

In the top emission structure, the second electrode 173 may be formed ofa transparent conductive material (TCO) such as ITO and/or IZO that cantransmit light, or may be formed of a semi-transmissive conductivematerial such as magnesium (Mg), silver (Ag), or an alloy thereof. Whenthe second electrode 173 is formed of a semi-transmissive conductivematerial, light emission efficiency can be increased by microcavities(e.g., by including microcavities).

The thin film encapsulation layer TFE may be formed on the lightemitting element layer EML. The thin film encapsulation layer TFE mayinclude at least one inorganic film to prevent or substantially preventoxygen and/or moisture from penetrating into the light emitting elementlayer EML. Further, the thin film encapsulation layer TFE may include atleast one organic layer to protect the light emitting element layer EMLfrom foreign matter such as dust.

In one alternative embodiment, a second substrate, instead of the thinfilm encapsulation layer TFE, is disposed on the light emitting elementlayer EML, and a space between the light emitting element layer EML andthe second substrate is empty in a vacuum state, or is filled with acharging film. The charging film may be an epoxy charging film and/or asilicon charging film.

FIG. 10 is an enlarged view of the area A of FIG. 4 according to anembodiment, FIG. 11 is a cross-sectional view taken along the lineIII-III′ of FIG. 10, and FIG. 12 is a cross-sectional view taken alongthe line IV-IV′ of FIG. 10.

Referring to FIGS. 4 and 10 to 12, at least one transmission portion TAmay be surrounded by a plurality of auxiliary pixels Pa. The pluralityof auxiliary pixels Pa may be electrically connected to each other by aplurality of wirings VIL, SLK-1, SLK, ELK, DL, and VDDL2.

According to an embodiment, the transmission portion TA may have arectangular shape before the plurality of wirings VIL, SLK-1, SLK, ELK,DL, and VDDL2 are arranged, and the plurality of wirings VIL, SLK-1,SLK, ELK, DL, and VDDL2 may be arranged in two rows and four columns. Asshown in FIG. 10, an auxiliary pixel Pa1 corresponding to the second rowand first column of the first pixel group Pg1, an auxiliary pixel Pa2corresponding to the second row and second column of the first pixelgroup Pg1, and an auxiliary pixel Pa3 corresponding to the first row andfourth column of the second pixel group Pg2 may be arranged around onevertex of the transmission portion TA having a rectangular shape.

The data line DL and the second driving voltage line VDDL2 may extend inthe second direction (Y direction) on the auxiliary pixel Pa1corresponding to the second row and first column of the first pixelgroup Pg1, and the data line DL and the second driving voltage lineVDDL2 may extend in the second direction (Y direction) on the auxiliarypixel Pa2 corresponding to the second row and second column of the firstpixel group Pg1. The initialization voltage line VIL, the first scanline SLK-1, the second scan line SLK, and the light emission controlline ELK may extend in the first direction (X direction) on theauxiliary pixel Pa3 corresponding to the first row and fourth column ofthe second pixel group Pg2.

In order to ensure the maximum transmittance of the transmission portionTA, the plurality of wirings VIL, SLK-1, SLK, ELK, DL, and VDDL2 may bearranged along the edge of the transmission portion TA. Meanwhile, thesecond electrode 173 may not be disposed on the transmission portion TA.For convenience of explanation, although it is shown in the drawingsthat the initialization voltage line VIL, the first scan line SLK-1, thesecond scan line SLK, and the light emission control line ELK, extendingin the first direction (X direction), are arranged to be spaced apartfrom each other by a set or predetermined interval, the plurality ofwirings VIL, SLK-1, SLK, ELK, DL, and VDDL2 may be arranged withoutbeing spaced apart from each other in a plan view.

According to an embodiment, the initialization voltage line VIL may beformed of the second gate layer GTL2 formed on a first interlayerinsulating film 141 on both the auxiliary pixel Pa3 and the transmissionportion TA. The first scan line SLK-1 may be formed of the first gatelayer GTL1 formed on the gate insulating film 130 on both the auxiliarypixel Pa3 and the transmission portion TA. The second scan line SLK maybe formed of the first gate layer GTL1 formed on the gate insulatingfilm 130 on the auxiliary pixel Pa3, and the second scan line connectionline SLK_Br may be formed of a second gate layer GTL2 formed on thefirst interlayer insulating film 141 on the transmission portion TA. Thesecond scan line connection line SLK_Br may be electrically and/orphysically connected to the second scan line SLK through a ninth contacthole CNT9 formed in the first interlayer insulating film 141. The lightemission control line ELK may be formed of the first gate layer GTL1formed on the gate insulating film 130 on both the auxiliary pixel Pa3and the transmission portion TA.

Generally, the initialization voltage line VIL, the first scan lineSLK-1, the second scan line SLK, and the light emission control lineELK, extending in the first direction (X direction), may each include abending portion extending in the second direction (Y direction)intersecting (or crossing) the first direction (X direction) around onevertex of the transmission portion TA.

The light emission control line ELK may include a triangular firstextension portion ELK_Ex in a region near the bending portion. The firstextension portion ELK_Ex may be concurrently or simultaneously formed ofthe same material as the light emission control line ELK. For example,the first extension portion ELK_Ex may be formed as a single layer ormultiple layers including any one of molybdenum (Mo), aluminum (Al),chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd),and copper (Cu), or an alloy thereof.

The first extension portion ELK_Ex may include a first hypotenuse facingthe bending portion. The angle θ1 of the first hypotenuse to the firstdirection (X direction) may be the same in the plurality of transmissionportions TA. For example, the angle θ1 of the first hypotenuse to thefirst direction (X direction) may be about 45°.

According to an embodiment, the data line DL may be formed of the firstdata metal layer DTL1 formed on the second interlayer insulating film142 on both the auxiliary pixels Pa1 and Pa2 and the transmissionportion TA. The second driving voltage line VDDL2 may be formed of thefirst data metal layer DTL1 formed on the second interlayer insulatingfilm 142 on the auxiliary pixels Pa1 and Pa2. The connection wiringVDDL2_Br of the second driving voltage line may be formed of the seconddata metal layer DTL2 formed on the protective film 150 on thetransmission portion TA. The connection wiring VDDL2_Br of the seconddriving voltage line may be electrically and/or physically connected tothe second driving voltage line VDDL2 through a tenth contact hole CNT10formed in the protective film 150.

Generally, the data line DL and the second driving voltage line VDDL2,extending in the second direction (Y direction), may include a bendingportion extending in the first direction (X direction) intersecting (orcrossing) the second direction (Y direction) around one vertex of thetransmission portion TA.

The data line DL and the second driving voltage line VDDL2 disposed onthe auxiliary pixel Pa1 may be disposed to overlap the initializationvoltage line VIL and the first scan line SLK-1 in the third direction (Zdirection) at the bending portion, and the data line DL and the seconddriving voltage line VDDL2 disposed on the auxiliary pixel Pa2 may bedisposed to overlap the second scan line SLK and the light emissioncontrol line ELK in the third direction (Z direction) at the bendingportion. In particular, the second driving voltage line VDDL2 disposedon the auxiliary pixel Pa2 may be disposed to overlap the firstextension portion ELK_Ex of the light emission control line ELK in thethird direction (Z direction) at the bending portion.

Because the arrangement of the plurality of wirings VIL, SLK-1, SLK,ELK, DL, and VDDL2 at another vertex of the transmission portion TA issymmetrical to the aforementioned contents, hereinafter, a detaileddescription thereof will be omitted. Because the first triangularextension portion ELK_Ex is disposed at each of the four vertices of therectangular transmission portion TA, as a result, the transmissionportion TA may have a planar octagonal shape. In the octagonaltransmission portion TA as compared with the triangular transmissionportion TA, the aforementioned diffraction phenomenon may be reduced.Thus, the first extension portion ELK_Ex is further formed in theprocess of forming the plurality of wirings without an additionalseparate process, thereby maintaining suitable (e.g., good) detectionability of the sensor device (such as the sensor) disposed under thetransmission portion TA.

Hereinafter, other embodiments will be described. In the followingembodiments, the same configuration as the embodiment already describedwill be omitted or simplified, and differences will be mainly described.

FIG. 13 is an enlarged view of the area A of FIG. 4 according to anotherembodiment.

Referring to FIGS. 11 to 13, a first extension portion ELK_Ex1 of thelight emission control line ELK is different from the first extensionportion ELK_Ex including a linear hypotenuse of FIG. 12 in that thefirst extension portion ELK_Ex1 includes a curved hypotenuse.

More specifically, the light emission control line ELK may be formed ofthe first gate layer GTL1 formed on the gate insulating film 130 on boththe auxiliary pixel Pa3 and the transmission portion TA. Generally, thelight emission control line ELK extending in the first direction (Xdirection) includes a bending portion extending in the second direction(Y direction) crossing the first direction (X direction) around onevertex of the transmission portion TA.

The light emission control line ELK may include a first extensionportion ELK_Ex1 in a region near the bending portion. The firstextension portion ELK_Ex1 may be concurrently or simultaneously formedof the same material as the light emission control line ELK. Forexample, the first extension portion ELK_Ex1 may be formed as a singlelayer or multiple layers including any one of molybdenum (Mo), aluminum(Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium(Nd), and copper (Cu), or an alloy thereof.

The first extension portion ELK_Ex1 may include a curved side facing thebending portion. The curvature of the curved side may be the same in theplurality of transmission portions TA.

The second driving voltage line VDDL2 may be disposed to overlap thefirst extension portion ELK_Ex1 of the light emission control line ELKin the third direction (Z direction) at the bending portion.

Because the first extension portion ELK_Ex1 having a curved side isdisposed at each of the four vertices of the rectangular transmissionportion TA, as a result, the transmission portion TA may have anelliptical or circular shape in a plan view. In the elliptical orcircular transmission portion TA as compared with the rectangulartransmission portion TA, the aforementioned diffraction phenomenon maybe reduced. Thus, the first extension portion ELK_Ex1 is further formedin the process of forming the plurality of wirings without an additionalseparate process, thereby maintaining suitable (e.g., good) detectionability of the sensor device (such as the sensor) disposed under thetransmission portion TA.

FIGS. 14A and 14B are each an enlarged view of the area A of FIG. 4according to other embodiments.

Referring to FIGS. 11, 12, 14A, and 14B, the same structures as thefirst extension portions ELK_Ex and ELK_Ex1 shown in FIGS. 10 and 13 areformed utilizing a lower metal layer BSL, not the light emission controlline ELK.

More specifically, the transmission portion TA may have a rectangularshape before the plurality of wirings VIL, SLK-1, SLK, ELK, DL, andVDDL2 are arranged, and the plurality of auxiliary pixels Pa may bearranged in two rows and four columns. As shown in FIGS. 14A and 14B, anauxiliary pixel Pa1 corresponding to the second row and first column ofthe first pixel group Pg1, an auxiliary pixel Pa2 corresponding to thesecond row and second column of the first pixel group Pg1, and anauxiliary pixel Pa3 corresponding to the first row and fourth column ofthe second pixel group Pg2 may be arranged around one vertex of thetransmission portion TA having a rectangular shape.

The data line DL and the second driving voltage line VDDL2 may extend inthe second direction (Y direction) on the auxiliary pixel Pa1corresponding to the second row and first column of the first pixelgroup Pg1, and the data line DL and the second driving voltage lineVDDL2 may extend in the second direction (Y direction) on the auxiliarypixel Pa2 corresponding to the second row and second column of the firstpixel group Pg1. The initialization voltage line VIL, the first scanline SLK-1, the second scan line SLK, and the light emission controlline ELK may extend in the first direction (X direction) on theauxiliary pixel Pa3 corresponding to the first row and fourth column ofthe second pixel group Pg2.

In order to ensure desired (e.g., the maximum) transmittance of thetransmission portion TA, the plurality of wirings VIL, SLK-1, SLK, ELK,DL, and VDDL2 may be arranged along the edge of the transmission portionTA. Meanwhile, the second electrode 173 may not be disposed on thetransmission portion TA. For convenience of explanation, although it isshown in the drawings that the initialization voltage line VIL, thefirst scan line SLK-1, the second scan line SLK, and the light emissioncontrol line ELK, extending in the first direction (X direction), arearranged to be spaced apart from each other by a set or predeterminedinterval, the plurality of wirings VIL, SLK-1, SLK, ELK, DL, and VDDL2may be arranged without being spaced apart from each other in a planview.

According to an embodiment, the initialization voltage line VIL may beformed of the second gate layer GTL2 formed on the first interlayerinsulating film 141 on both the auxiliary pixel Pa3 and the transmissionportion TA. The first scan line SLK-1 may be formed of the first gatelayer GTL1 formed on the gate insulating film 130 on both the auxiliarypixel Pa3 and the transmission portion TA. The second scan line SLK maybe formed of the first gate layer GTL1 formed on the gate insulatingfilm 130 on the auxiliary pixel Pa3, and the second scan line connectionline SLK_Br may be formed of a second gate layer GTL2 formed on thefirst interlayer insulating film 141 on the transmission portion TA. Thesecond scan line connection line SLK_Br may be electrically and/orphysically connected to the second scan line SLK through a ninth contacthole CNT9 formed in the first interlayer insulating film 141. The lightemission control line ELK may be formed of the first gate layer GTL1formed on the gate insulating film 130 on both the auxiliary pixel Pa3and the transmission portion TA.

Generally, the initialization voltage line VIL, the first scan lineSLK-1, the second scan line SLK, and the light emission control lineELK, extending in the first direction (X direction), may include abending portion extending in the second direction (Y direction)intersecting (or crossing) the first direction (X direction) around onevertex of the transmission portion TA.

The lower metal layer BSM may be disposed on the substrate SUB1.According to an embodiment, the lower metal layer BSM may be disposedover the entire transmission portion TA excluding one region thereof inthe sensor area SA. For example, the lower metal layer BSM may include atriangular extension portion BSM_Ex in a region near the body portionBSM_BD and bending portion of the lower metal layer BSM overlapping theplurality of auxiliary pixels Pa and the plurality of wirings VIL,SLK-1, SLK, ELK, DL, and VDDL2 disposed along the edge of thetransmission portion TA in the third direction (Z direction).

The body portion BSM_BD and extension portion BSM_Ex of the lower metallayer BSM may be formed as a single layer or multiple layers includingany one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au),titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloythereof.

As shown in FIG. 14A, the extension portion BSM_Ex of the lower metallayer BSM may include a first hypotenuse facing the bending portion. Theangle θ1 of the first hypotenuse to the first direction (X direction)may be the same in the plurality of transmission portions TA. Forexample, the angle θ1 of the first hypotenuse to the first direction (Xdirection) may be about 45°.

Further, as shown in FIG. 14B, the extension portion BSM_Ex1 of thelower metal layer BSM may include a curved side facing the bendingportion. The curvature of the curved side may be the same in theplurality of transmission portions TA.

According to an embodiment, the data line DL may be formed of the firstdata metal layer DTL1 formed on the second interlayer insulating film142 on both the auxiliary pixels Pa1 and Pa2 and the transmissionportion TA. The second driving voltage line VDDL2 may be formed of thefirst data metal layer DTL1 formed on the second interlayer insulatingfilm 142 on the auxiliary pixels Pa1 and Pa2. The connection lineVDDL2_Br of the second driving voltage line may be formed of the seconddata metal layer DTL2 formed on the protective film 150 on thetransmission portion TA. The connection line VDDL2_Br of the seconddriving voltage line may be electrically and/or physically connected tothe second driving voltage line VDDL2 through the tenth contact holeCNT10 formed in the protective film 150.

Generally, the data line DL and the second driving voltage line VDDL2,extending in the second direction (Y direction), may include a bendingportion extending in the first direction (X direction) intersecting (orcrossing) the second direction (Y direction) around one vertex of thetransmission portion TA.

The data line DL and the second driving voltage line VDDL2 disposed onthe auxiliary pixel Pa1 may be disposed to overlap the initializationvoltage line VIL and the first scan line SLK-1 in the third direction (Zdirection) at the bending portion, and the data line DL and the seconddriving voltage line VDDL2 disposed on the auxiliary pixel Pa2 may bedisposed to overlap the second scan line SLK and the light emissioncontrol line ELK in the third direction (Z direction) at the bendingportion.

Because the arrangement of the plurality of wirings VIL, SLK-1, SLK,ELK, DL, and VDDL2 at another vertex of the transmission portion TA issymmetrical to the aforementioned contents, hereinafter, a detaileddescription thereof will be omitted.

When the triangular extension portion BSM_Ex of the lower metal layerBSM is disposed at each of the four vertices of the rectangulartransmission portion TA, the transmission portion TA may have anoctagonal shape in a plan view, and when the extension portion BSM_Ex1thereof having a curved side is disposed at each of the four vertices ofthe rectangular transmission portion TA, the transmission portion TA mayhave an elliptical or circular shape in a plan view.

In the octagonal transmission portion TA and the elliptical or circulartransmission portion TA as compared with the rectangular transmissionportion TA, the aforementioned diffraction phenomenon may be reduced.Thus, the body portion BSM_BD and extension portions BSM_Ex and BSM_Ex1of the lower metal layer BSM are further formed in the process offorming the lower metal layer BSM without an additional separateprocess, thereby maintaining suitable (e.g., good) detection ability ofthe sensor device (such as the sensor) disposed under the transmissionportion TA.

FIG. 15 is an enlarged view of the area B of FIG. 4 according to anotherembodiment.

Referring to FIG. 15, the present embodiment is different from theembodiment shown in FIG. 11 in that an integrated wiring VDDL2_BE of thesecond driving voltage lines, electrically connecting the plurality ofsecond driving voltage lines VDDL2 to each other, is provided.

More specifically, the plurality of auxiliary pixels Pa may be pixelsarranged in two rows and four columns. As shown in FIG. 15, an auxiliarypixel Pa1 corresponding to the second row and first column of the firstpixel group Pg1, an auxiliary pixel Pa2 corresponding to the second rowand second column of the first pixel group Pg1, an auxiliary pixel Pa4corresponding to the second row and third column of the first pixelgroup Pg1, and an auxiliary pixel Pa5 corresponding to the second rowand fourth column of the first pixel group Pg1 may be arranged aroundone vertex of the transmission portion TA having a rectangular shape.Further, an auxiliary pixel Pa3 corresponding to the first row andfourth column of the second pixel group Pg2 may be arranged around onevertex thereof.

Generally, the initialization voltage line VIL, the first scan lineSLK-1, the second scan line SLK, and the light emission control lineELK, extending in the first direction (X direction), may include abending portion extending in the second direction (Y direction)intersecting (or crossing) the first direction (X direction) around onevertex of the transmission portion TA.

The data line DL_a and the second driving voltage line VDDL2_a mayextend in the second direction (Y direction) on the auxiliary pixel Pa1corresponding to the second row and first column of the first pixelgroup Pg1, the data line DL_b and the second driving voltage lineVDDL2_b may extend in the second direction (Y direction) on theauxiliary pixel Pa2 corresponding to the second row and second column ofthe first pixel group Pg1, the data line DL_c and the second drivingvoltage line VDDL2_c may extend in the second direction (Y direction) onthe auxiliary pixel Pa4 corresponding to the second row and third columnof the first pixel group Pg1, and the data line DL_d and the seconddriving voltage line VDDL2_d may extend in the second direction (Ydirection) on the auxiliary pixel Pa5 corresponding to the second rowand fourth column of the first pixel group Pg1.

The initialization voltage line VIL, the first scan line SKJ-1, thesecond scan line SLK, and the light emission control line ELK may extendin the first direction (X direction) on the auxiliary pixel Pa3corresponding to the first row and fourth column of the second pixelgroup Pg2.

According to an embodiment, the data lines DL_a, DL_b, DL_c, and DL_dmay be formed of the first data metal layer DTL1 formed on the secondinterlayer insulating film 142 on both the auxiliary pixels Pa1, Pa2,Pa4, and Pa5 and the transmission portion TA. The second driving voltagelines VDDL2_a, VDDL2_b, VDDL2_c, and VDDL2_d may be formed of the firstdata metal layer DTL1 formed on the second interlayer insulating film142 on the auxiliary pixels Pa1, Pa2, Pa4, and Pa5. The integratedwiring VDDL2_BE of the second driving voltage line may be formed of thesecond data metal layer DTL2 formed on the protective film 150 on thetransmission portion TA. The integrated wiring VDDL2_BE of the seconddriving voltage line may be electrically and/or physically connected tothe respective second driving voltage lines VDDL2_a, VDDL2_b, VDDL2_c,and VDDL2_d through the tenth contact holes CNT10_a, CNT10_b, CNT10_c,and CNT10_d formed in the protective film 150.

Generally, the data lines DL_a, DL_b, DL_c, and DL_d and the integratedline VDDL2_BE of the second driving voltage line, extending in thesecond direction (Y direction), may include a bending portion extendingin the first direction (X direction) intersecting (or crossing) thesecond direction (Y direction) around one vertex of the transmissionportion TA. The integrated wiring VDDL2_BE of the second driving voltageline may overlap the first scan line SLK-1 in the third direction (Zdirection) in a region around one vertex of the transmission portion TA.

FIG. 16 is a view showing wirings disposed on a transmission portionaccording to another embodiment.

Referring to FIG. 16, the present embodiment is different from theembodiment shown in FIG. 11 in that the angles θ1, θ2, θ3, θ4, and θ5 ofthe hypotenuses of the extension portions of the light emission controllines respectively arranged in the plurality of transmission portions TAto the first direction (X direction) are different from each other.

More specifically, the plurality of transmission portions TA may bealternately disposed with the plurality of pixel groups Pg along thefirst direction X and/or the second direction Y. In one alternativeembodiment, the transmission portions TA may be arranged to surround thepixel group Pg.

The plurality of light emission control lines ELK_a, ELK_b, ELK_c,ELK_d, ELK_e, and ELK_f may be generally arranged in the first direction(X direction), and may include a triangular extension portion ELK_Ex atthe vertex of the transmission portion TA. The extension portion ELK_Exmay include a hypotenuse extending in the first diagonal direction DDR1between the first direction (X direction) and the second direction (Ydirection). The angles θ1, θ2, θ3, θ4, and θ5 of the hypotenuses to thefirst direction (X direction) may be different from each other. Forexample, the angles θ1, θ2, θ3, θ4, and θ5 of the hypotenuses to thefirst direction (X direction) may be acute angles of greater than 0° andsmaller than 90°. As the angles θ1, θ2, θ3, θ4, and θ5 of thehypotenuses to the first direction (X direction) increase, the lighttransmission amount of the transmission portion TA may increase.

Because the triangular extension portion ELK_Ex is provided at thevertex of the rectangular transmission portion TA, the transmissionportion TA may have a planar octagonal shape, and a sensor device (suchas a sensor) may be disposed under the plurality of transmissionportions TA. According to an embodiment, the length of one side of thetransmission portion TA may be 80 μm, and the length of one side of thesensor device SS, such as a sensor, may be 4 mm. That is, a very largenumber of transmission portions TA may be matched to one sensor deviceSS. When the angles θ1, θ2, θ3, θ4, and θ5 of the hypotenuses of theextension portions ELK_Ex disposed in the respective transmissionportions TA are different from each other, the light passing through thetransmission portion TA is diffracted slightly differently, and theeffect similar to that in the case where the light passing through thecircular transmission portion TA is diffracted may be exhibited onaverage.

FIG. 17 is a view showing wirings disposed on a transmission portionaccording to another embodiment, and FIG. 18 is an enlarged view of thearea C of FIG. 17.

Referring to FIGS. 17 and 18, the present embodiment is different fromthe embodiment of FIG. 11 in that a triangular second extension portionVDDL2_Ex is further provided in a region near the bending portion of theconnection line VDDL22_Br of the second driving voltage line.

More specifically, the light emission control line ELK may be formed ofthe first gate layer GTL1 on both the auxiliary pixel Pa3 and thetransmission portion TA. Generally, the light emission control line ELKextending in one direction (X direction) may include a bending portionextending in the second direction (Y direction) intersecting (orcrossing) the first direction (X direction) near one vertex of thetransmission portion TA.

The light emission control line ELK may include a first extensionportion ELK_Ex in a region near the bending portion. The first extensionportion ELK_Ex may be concurrently or simultaneously formed of the samematerial as the light emission control line ELK. For example, the firstextension portion ELK_Ex may be formed as a single layer or multiplelayers including any one of molybdenum (Mo), aluminum (Al), chromium(Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper(Cu), or an alloy thereof.

The connection wiring VDDL22_Br of the second driving voltage line maybe electrically and/or physically connected to the second drivingvoltage line VDDL22 through the tenth contact hole CNT10. The connectionwiring VDDL22_Br of the second driving voltage line may be formed of thesecond data metal layer DTL2 formed on the protective film 150 on thetransmission portion TA.

The connection wiring VDDL22_Br of the second driving voltage line mayinclude a second extension portion VDDL2_Ex in a region near the bendingportion. The second extension portion VDDL2_Ex may be concurrently orsimultaneously formed of the same material as the connection wiringVDDL22_Br of the second driving voltage line. For example, the secondextension portion VDDL2_Ex may be formed as a single layer or multiplelayers including any one of molybdenum (Mo), aluminum (Al), chromium(Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper(Cu), or an alloy thereof.

The second extension part VDDL2_Ex may include a hypotenuse extending inthe first diagonal direction DDR1 between the first direction (Xdirection) and the second direction (Y direction). The angle θ6 of thehypotenuse of the second extension portion VDDL2_Ex to the firstdirection (X direction) may be different from the angle θ1 of thehypotenuse of the first extension portion ELK_Ex to the first direction(X direction). According to an embodiment, the angle θ6 of thehypotenuse of the second extension portion VDDL2_Ex to the firstdirection (X direction) may be greater than the angle θ1 of thehypotenuse of the first extension portion ELK_Ex to the first direction(X direction). In this case, the first extension portion ELK_Ex and thesecond extension portion VDDL2_Ex may only partially overlap each otherin the third direction DR3.

Because the first triangular extension portion ELK_Ex and the secondtriangular extension portion VDDL2_Ex are disposed at each of the fourvertices of the rectangular transmission portion TA, as a result, thetransmission portion TA may have a planar dodecagonal shape. In thedodecagonal transmission portion TA as compared with the rectangulartransmission portion TA, the aforementioned diffraction phenomenon maybe reduced. Thus, the first extension portion ELK_Ex and the secondextension portion VDDL2_Ex are further formed in the process of formingthe plurality of wirings without an additional separate process, therebymaintaining suitable (e.g., good) detection ability of the sensor device(such as the sensor) disposed under the transmission portion TA.

FIG. 19 is a view showing wirings disposed on a transmission portionaccording to another embodiment, and FIG. 20 is an enlarged view of thearea D of FIG. 19.

Referring to FIGS. 19 and 20, the present embodiment is different fromthe embodiment of FIG. 11 in that a pixel group Pg_1 shown in FIG. 19has a smaller area than the pixel group Pg shown in FIG. 4 and in that aplurality of wirings VIL_1, SLK-1_1, SLK_1, ELK_1, DL1_1, and VDDL2_1connecting the plurality of pixel groups Pg_1 include two bendingportions in the vertex region of the transmission portion TA.

More specifically, when the pixel group Pg shown in FIG. 4 has a pixelsize of FHD (Full High Definition) (about 400 ppi), the pixel group Pg_1shown in FIGS. 19 and 20 may have a pixel size of UHD (Ultra HighDefinition) (about 500 ppi). Accordingly, the distance between the pixelgroups Pg_1 may be increased. That is, the area of one transmissionportion TA may be larger than the area of one auxiliary pixel Pg_1.

According to an embodiment, the transmission portion TA may have arectangular shape before the plurality of wirings VIL_1, SLK-1_1, SLK_1,ELK_1, DL1_1, and VDDL2_1 are arranged, and the plurality of auxiliarypixels Pa_1 may be arranged in two rows and four columns. As shown inFIG. 20, an auxiliary pixel Pa1_1 corresponding to the second row andfirst column of the first pixel group Pg1_1, an auxiliary pixel Pa2_1corresponding to the second row and second column of the first pixelgroup Pg1_1, and an auxiliary pixel Pa3_1 corresponding to the first rowand fourth column of the second pixel group Pg2_1 may be arranged aroundone vertex of the transmission portion TA having a rectangular shape.

The data line DL1_1 and the second driving voltage line VDDL21_1 mayextend in the second direction (Y direction) on the auxiliary pixelPa1_1 corresponding to the second row and first column of the firstpixel group Pg1_1, and the data line DL2_1 and the second drivingvoltage line VDDL22_1 may extend in the second direction (Y direction)on the auxiliary pixel Pa2_1 corresponding to the second row and secondcolumn of the first pixel group Pg1_1. The initialization voltage lineVIL_1, the first scan line SLK-1_1, the second scan line SLK_1, and thelight emission control line ELK_1 may extend in the first direction (Xdirection) on the auxiliary pixel Pa3_1 corresponding to the first rowand fourth column of the second pixel group Pg2_1.

In order to ensure the maximum transmittance of the transmission portionTA, the plurality of wirings VIL_1, SLK-1_1, SLK_1, ELK_1, DL1_1, andVDDL2_1 may be arranged along the edge of the transmission portion TA.For convenience of explanation, although it is shown in the drawingsthat the initialization voltage line VIL_1, the first scan line SLK-1_1,the second scan line SLK_1, and the light emission control line ELK_1,extending in the first direction (X direction), are arranged to bespaced apart from each other by a set or predetermined interval, theplurality of wirings VIL_1, SLK-1_1, SLK_1, ELK_1, DL1_1, VDDL21_1,DL2_1, and VDDL22_1 may be arranged without being spaced apart from eachother in a plan view.

According to an embodiment, the initialization voltage line VIL_1 may beformed of the second gate layer GTL2 formed on the gate insulating film130 on both the auxiliary pixel Pa3_1 and the transmission portion TA.The first scan line SLK-1_1 may be formed of the first gate layer GTL1formed on the buffer film BF on both the auxiliary pixel Pa3 and thetransmission portion TA. The second scan line SLK_1 may be formed of thefirst gate layer GTL1 formed on the buffer film BF on the auxiliarypixel Pa3, and the second scan line connection line SLK_Br1 may beformed of a second gate layer GTL2 formed on the gate insulating film130 on the transmission portion TA. The second scan line connection lineSLK_Br1 may be electrically and/or physically connected to the secondscan line SLK_1 through a ninth contact hole CNT9 formed in the gateinsulating film 130. The light emission control line ELK_1 may be formedof the first gate layer GTL1 formed on the buffer film BF on both theauxiliary pixel Pa3_1 and the transmission portion TA.

Generally, the initialization voltage line VIL_1, the first scan lineSLK-1_1, the second scan line SLK_1, and the light emission control lineELK_1, extending in the first direction (X direction), may include asection extending in the first diagonal direction DDR1 between the firstdirection (X direction) and the second direction (Y direction), and thusmay include two bending portions.

According to an embodiment, the data lines DL1_1 and DL2_1 may be formedof the first data metal layer DTL1 formed on the second interlayerinsulating film 142 on both the auxiliary pixels Pa1_1 and Pa2_1 and thetransmission portion TA. The second driving voltage lines VDDL21_1 andVDDL22_1 may be formed of the first data metal layer DTL1 formed on thesecond interlayer insulating film 142 on the auxiliary pixels Pa1_1 andPa2_1. The connection wirings VDDL21_Br1 and VDDL22_Br1 of the seconddriving voltage line may be formed of the second data metal layer DTL2formed on the protective film 150 on the transmission portion TA. Theconnection wirings VDDL21_Br1 and VDDL22_Br1 of the second drivingvoltage line may be electrically and/or physically connected to eachother through the tenth contact hole CNT10 formed in the protective film150.

Generally, the data line DL1 and DL2 and the second driving voltagelines VDDL21 and VDDL22, extending in the second direction (Ydirection), may include a section extending in the first diagonaldirection DDR1 between the first direction (X direction) and the seconddirection (Y direction), and thus may include two bending portions.

The data line DL1_1 and the second driving voltage line VDDL21_1disposed on the auxiliary pixel Pa1_1 may be disposed to overlap theinitialization voltage line VIL_1 and the first scan line SLK-1_1 in thethird direction (Z direction) at the two bending portions and around thetwo bending portions, respectively, and the data line DL2_1 and thesecond driving voltage line VDDL22_1 disposed on the auxiliary pixelPa2_1 may be disposed to overlap the second scan line SLK_1 and thelight emission control line ELK_1 in the third direction (Z direction)at the two bending portions and around the two bending portions,respectively.

According to the embodiments of the present disclosure, because thearrangement of the plurality of wirings VIL_1, SLK-1_1, SLK_1, ELK_1,DL1_1, VDDL21_1, DL2_1, and VDDL22_1 at another vertex of thetransmission portion TA is symmetrical to the aforementioned contents inthe first direction (X direction) and the second direction (Ydirection), hereinafter, a detailed description thereof will be omitted.Because the wirings extending in the first direction include a sectionextending in the first diagonal direction DDR1 by the two bendingportions at each of the four vertices of the rectangular transmissionportion TA, as a result, the transmission portion TA may have a planaroctagonal shape. In the octagonal transmission portion TA as comparedwith the rectangular transmission portion TA, the aforementioneddiffraction phenomenon may be reduced. Thus, the section extending inthe first diagonal direction DDR1 by the two bending portions in theprocess of forming the plurality of wirings without an additionalseparate process, thereby maintaining suitable (e.g., good) detectionability of the sensor device (such as the sensor) disposed under thetransmission portion TA.

According to the embodiments of the present disclosure, there can beprovided a display device, in which the diffraction of light is reducedaround a transmission portion, thereby improving the light receivingquantity and light receiving quality of a sensor device disposed underthe transmission portion.

The use of “may” when describing embodiments of the present inventionrefers to “one or more embodiments of the present invention.” Also, theterm “exemplary” is intended to refer to an example or illustration.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the subject matter of the presentdisclosure are not limited to such embodiments, but rather to thebroader scope of the appended claims and various obvious modificationsand equivalent arrangements as would be apparent to a person of ordinaryskill in the art.

What is claimed is:
 1. A display device, comprising: a substratecomprising a display area comprising a plurality of main pixels, and asensor area comprising a plurality of auxiliary pixels and a pluralityof transmission portions; and a plurality of wirings arranged alongedges of the plurality of transmission portions and electricallyconnecting the plurality of auxiliary pixels, wherein: the plurality ofwrings comprises a plurality of first directional wirings extending in afirst direction and arranged in a second direction crossing the firstdirection, and a plurality of second directional wirings extending inthe second direction and arranged in the first direction, and a wiringadjacent to the transmission portion from among the plurality of firstdirectional wirings comprises a first extension portion.
 2. The displaydevice of claim 1, wherein each transmission portion of the plurality oftransmission portions has a polygonal shape, a circular shape, or anelliptical shape in a plan view.
 3. The display device of claim 2,wherein each transmission portion of the plurality of transmissionportions has an octagonal shape in a plan view.
 4. The display device ofclaim 1, further comprising a sensor device overlapping with theplurality of transmission portions in a thickness direction of thesubstrate, the sensor device is to sense infrared light, visible light,and/or sound.
 5. The display device of claim 1, wherein the plurality offirst directional wirings comprise: a first wiring to apply aninitialization voltage into auxiliary pixels arranged in the firstdirection from among the plurality of auxiliary pixels; a second wiringto apply a first scan signal into the auxiliary pixels arranged in thefirst direction; a third wiring to apply a second scan signal into theauxiliary pixels arranged in the first direction; and a fourth wiring toapply an emission control signal into the auxiliary pixels arranged inthe first direction.
 6. The display device of claim 5, wherein theplurality of second directional wirings comprise: a fifth wiring toapply a data voltage into auxiliary pixels arranged in the seconddirection from among the plurality of auxiliary pixels; and a sixthwiring to apply a first power into the auxiliary pixels arranged in thesecond direction.
 7. The display device of claim 6, wherein in an areain which the auxiliary pixels arranged in the first direction arearranged, the second wiring, the third wiring, and the fourth wiring areon the substrate, a first insulation layer is on the second wiring, thethird wiring, and the fourth wiring, and the first wiring is on thefirst insulation layer.
 8. The display device of claim 7, wherein in theedges of the plurality of transmission portions, the second wiring andthe fourth wiring are on the substrate, and the first wiring and aconnection wiring of the third wiring are on the first insulation layer.9. The display device of claim 8, wherein the connection wiring of thethird wiring is connected to the third wiring through a first contacthole which penetrates the first insulating layer.
 10. The display deviceof claim 7, wherein in the area in which the auxiliary pixels arrangedin the first direction are arranged, a second insulation layer is on thefirst wiring, and the fifth wiring and the sixth wiring are on thesecond insulation layer.
 11. The display device of claim 10, wherein inthe edges of the plurality of transmission portions, the fifth wiring ison the second insulation layer, a third insulation layer is on the fifthwiring, and a connection wiring of the sixth wiring is on the thirdinsulation layer.
 12. The display device of claim 11, wherein theconnection wiring of the sixth wiring is connected to the sixth wiringthrough a second contact hole which penetrates the third insulatinglayer.
 13. The display device of claim 6, wherein each of the first tosixth wirings comprises a bending portion that is bent at the edges ofthe plurality of transmission portions in a plan view, and the firstextension portion is extended from the bending portion of the fourthwiring.
 14. The display device of claim 13, wherein the first extensionportion has a triangle shape in a plan view.
 15. The display device ofclaim 13, wherein the first extension portion comprises a firsthypotenuse facing the bending portion, and an angle of the firsthypotenuse to the first direction is different for each transmissionportion.
 16. The display device of claim 15, wherein the sixth wiringcomprises a second extension portion extending from the bending portionof the sixth wiring toward the transmission portion.
 17. The displaydevice of claim 16, wherein the second extension portion has a triangleshape in a plan view.
 18. The display device of claim 16, wherein thefirst extension portion comprises a same material as the fourth wiring,and the second extension portion comprises a same material as the sixthwiring.
 19. The display device of claim 17, wherein the second extensionportion comprises a second hypotenuse facing the bending portion, and anangle of the second hypotenuse to the first direction is different fromthe angle of the first hypotenuse to the first direction.
 20. A displaydevice, comprising: a substrate comprising a display area comprising aplurality of main pixels, and a sensor area comprising a plurality ofauxiliary pixels and a plurality of transmission portions; and aplurality of wirings arranged along edges of the plurality oftransmission portions and electrically connecting the plurality ofauxiliary pixels to each other, wherein the plurality of wringscomprises a plurality of first directional wirings extending in a firstdirection and arranged in a second direction crossing the firstdirection, and a plurality of second directional wirings extending inthe second direction and arranged in the first direction, and each ofthe plurality of first directional wirings and the plurality of seconddirectional wirings comprises at least two bending portions at the edgesof the plurality of transmission portions.
 21. The display device ofclaim 20, wherein an area of one of the plurality of transmissionportions is larger than a light emitting area of one of the plurality ofauxiliary pixels.
 22. The display device of claim 20, wherein theplurality of first directional wirings and the plurality of seconddirectional wirings overlap each other in a thickness direction of thesubstrate in the at least two bending portions.